1. Engineering
2. Electrical Engineering
3. 519803

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An npn transistor has the doping concentrations as given in TABLE A, where NDE and NDC are the emitter and collector donor concentrations and NAB the acceptor concentration of the base.

FIGURE 2(a) represents the electron and hole carrier densities in the emitter, base and collector for the unbiased transistor.

(a) Justify the assumption made in FIGURE 2(a) that the majority carrier densities nE, nB and nC can be regarded as being the same value as the doping densities NDE, NAB and NDC, respectively.

(b) Determine the values of the unbiased minority carrier densities pE0, nB0 and pC0.

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