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A silicon n-p-n bipolar junction transistor is designed with emitter, base and collector doping levels of 10^19cm, 10^15cm and 5*10^17cm, respectively. Assuming the intrinsic carrier concentration (ni) in silicon to be 10^10cm, calculate the Fermi Energy, Ef, relative to the intrinsic energy scale clearly to show the relative positions of Ef and Efi for each layer.
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This solution is provided in an attached .doc file. It includes a diagram to enhance understanding as well as calculations for Fermi Energy for the emitter, base and collector.