Purchase Solution

Fermi Energy and Circuits

Not what you're looking for?

Ask Custom Question

REVISION QUESTIONS

Please could you provide detailed answers from the questions below;

1. a silicon n-p-n bipolar junction (BJT) is designed with emitter, base and collector doping levels of 1019 cm-3 , 1015 cm-3 and 5 × 1017 cm-3 , respectively. Assuming the intrinsic carrier concentration (ni) in silicon to be 1010 cm-3 , calculate the Fermi energy, EF, relative to the intrinsic Fermi energy, EFi for each layer. Hence draw the energy band diagram for the BJT labelling the energy sale clearly to show the relative positions of EF and EFi across the structure.

Explain; [a] the choice of doping levels for emitter, base and collector.

[b] the biasing conditions required to turn the transistor on.

Attachments
Purchase this Solution
Solution Summary

This solution is comprised of a very detailed, step-by-step guide on how to approach and answer these electrical and computer engineering based questions. The provided solution contains the necessary equations for solving the questions and an explanation of what all the variables within the equations represent. In order to view the solution, a pdf file needs to be opened.

Purchase this Solution
Free BrainMass Quizzes
The Moon

Test your knowledge of moon phases and movement.

Intro to the Physics Waves

Some short-answer questions involving the basic vocabulary of string, sound, and water waves.

Basic Physics

This quiz will test your knowledge about basic Physics.

Introduction to Nanotechnology/Nanomaterials

This quiz is for any area of science. Test yourself to see what knowledge of nanotechnology you have. This content will also make you familiar with basic concepts of nanotechnology.

Classical Mechanics

This quiz is designed to test and improve your knowledge on Classical Mechanics.

View More Free Quizzes
Related BrainMass Solutions

  • Fermi Function versus Energy

    Fermi Energy and temperature for n-type semi conductor For n - type semi conductor the Fermi energy dependence on absolute temperature is given by [2] as E_F = E_I + (k_B)(T)*Ln(n/n_i) Where n is the concentration of majority carriers (electrons

  • Plot of the Fermi distribution function for different temperatures

    619219 Plot of the Fermi distribution function for different temperatures plot the fermi distribution function at 200,300 and 400k(all on grah) and discuss the results in comparison to question 4.

  • Pressure of Fermi gas at Absolute zero

    185564 Pressure excerted by a Fermi gas, at absolute zero Show that the pressure exerted by a Fermi gas at absolute zero is p = (2NEf)/(5V) where N is the total number of particles, Ef the fermi energy and V is

  • Compute the Fermi energy and momentum at absolute zero

    225920 Fermi energy and wavevector for a gas at absolute zero. Fermi energy and wavevector for a gas at absolute zero.

  • Fermi Energies of Fermi Gases

    energies and temperatures of the elements using the Fermi energy of an ideal gas spin formula on different situations.

  • Bipolar Junction Transistor

    It includes a diagram to enhance understanding as well as calculations for Fermi Energy for the emitter, base and collector.

  • Heat capacity of a 2D electron gas and a 2D phonon gas

    Show that the density of states for an ideal two-dimensional Fermi gas of particle with spin 1/2 and mass m that occupies area A is: g(E)=(A/2pi)(2m/h^2) Obtain a relationship between the number of electrons per unit area and the Fermi energy E_f

  • PN Junction - explanation and uses

    This happens at a very precise voltage, determined by the doping level, and so can be used as a voltage reference in circuits.

  • Energy and pressure of Fermi gas at absolute zero

    175127 Energy and pressure of Fermi gas at absolute zero. See attached file. At zero temperature the system will be in the ground state.

View More Related Solutions