See attached file for full problem description. Analyze the data from McDonald Creek Site # 3 and 4.© BrainMass Inc. brainmass.com October 24, 2018, 9:39 pm ad1c9bdddf
The review of your document indicates absorbance values for various metal ions in water samples collected from McDonald creek. As a thumb rule in ...
See attached file for full problem description. Analyze the data from McDonald Creek Site # 3 and 4.
Solid State Chemistry - Density, Absorption, Charge
1.) FREE CARRIER DENSITY
Chemical analysis of a germanium crystal reveals indium at a level of 0.0003091 atomic percent. Assuming that the concentration of thermally excited charge carriers from the Ge matrix is negligible, what is the density of free charge carriers (free carriers/cm3) in this Ge crystal?
2.) BORON DOPING
Determine the amount (in grams) of boron that when substitutionally incorporated into1 kg of silicon will establish a charge carrier density of 3.091×1017 carriers/cm3.
3.) H4P4: N-TYPE SILICON
You wish to make n-type silicon.
(a) Select all suitable dopant atoms from the following list:
P B Mg Ga As In Sb Al Tl H
(b) Name the majority charge carrier in the doped material.
Holes Electrons Electron-hole pairs The dopant ion
(c) The conduction band is at a higher energy than the valence band. True or false?
(d) No electronic states lie between the conduction and valence bands in n-type silicon. True or false?
4.) H4P5: ABSORPTION EDGE
Gallium nitride (GaN) is a semiconductor with a bandgap Eg=3.2 eV. Calculate the absorption edge of GaN. Express your answer in units of m.