create a pn junction by ion implanting dopant atoms(opposite conductivity to original which was silicon doped with antimony at 10^16cm-3) equivalent to a dopant concentration of 10^18cm-3. carrier reccombination lifetimes in silicon sample is po=no=5us. the sample is 1mm long and area of A = 10^-4cm-2.
if the pn junction has a applied forward bias of 0.2 volts and another has a reverse bias of 1 volt determine barrier height,depletion layer width, electric field profile across junction and reverse saturation current density. also sketch energy level diagrams for equilibrium, 0.2 volts forward bias, and 1 volt reverse bias.
This solution discusses the p-n junction energy level diagrams.