Purchase Solution

p-n junction energy level diagrams

Not what you're looking for?

Ask Custom Question

create a pn junction by ion implanting dopant atoms(opposite conductivity to original which was silicon doped with antimony at 10^16cm-3) equivalent to a dopant concentration of 10^18cm-3. carrier reccombination lifetimes in silicon sample is po=no=5us. the sample is 1mm long and area of A = 10^-4cm-2.
if the pn junction has a applied forward bias of 0.2 volts and another has a reverse bias of 1 volt determine barrier height,depletion layer width, electric field profile across junction and reverse saturation current density. also sketch energy level diagrams for equilibrium, 0.2 volts forward bias, and 1 volt reverse bias.

Purchase this Solution
Solution Summary

This solution discusses the p-n junction energy level diagrams.

Purchase this Solution
Free BrainMass Quizzes
Variables in Science Experiments

How well do you understand variables? Test your knowledge of independent (manipulated), dependent (responding), and controlled variables with this 10 question quiz.

Basic Physics

This quiz will test your knowledge about basic Physics.

Classical Mechanics

This quiz is designed to test and improve your knowledge on Classical Mechanics.

Intro to the Physics Waves

Some short-answer questions involving the basic vocabulary of string, sound, and water waves.

Introduction to Nanotechnology/Nanomaterials

This quiz is for any area of science. Test yourself to see what knowledge of nanotechnology you have. This content will also make you familiar with basic concepts of nanotechnology.

View More Free Quizzes
Related BrainMass Solutions

  • PN Junction - explanation and uses

    The chemical potential is higher for n-type than p-type materials and so when they come into contact electrons will flow from n-type to p-type and holes will flow in the opposite direction, from p-type to n-type.

  • Bipolar Junction Transistor

    28217 Bipolar Junction Transistor A silicon n-p-n bipolar junction transistor is designed with emitter, base and collector doping levels of 10^19cm, 10^15cm and 5*10^17cm, respectively.

  • Semiconductors

    Anode has the P-type material while the cathode has the N-type material. The merged materials form a junction barrier in between that prevents electrons from the N-type material and the holes of the P-type material to merge.

  • Photodiode IV characteristics

    n_i is intrinsic charge carrier concentration, for silicon, n_i = 1.45E10 cm-1 (Ref.2) In above equation first term in bracket dominant for n+-p junction while second term dominant for p+-n junction.

  • Fermi Energy and Circuits

    10580 Fermi Energy and Circuits REVISION QUESTIONS Please could you provide detailed answers from the questions below; 1. a silicon n-p-n bipolar junction (BJT) is designed with emitter, base and collector doping levels of 1019 cm-3 , 1015

  • Time for p-n junction formation

    The expert calculates the time needed to form a p-n junction at a specified depth during implantation.

  • Quantum Numbers & Electron Configurations

    Carbon has 6 electrons, 2 of which are in level 1 and 4 of which are in level 2. The letters (s, p, d etc.) are the possible orbitals within that energy level.

  • Physics of Electronic Devices and Circuits

    As electrons continue to come into the conduction band, they will be pushed to the p-type side of the p-n junction, which has more space to hold electrons.

  • Question about Time for p-n junction formation

    Find the time it takes to form a junction at depth of 1um at a temperature 1050 degrees C. D = 10^-13 cm^2/s See the attached file. Calculate the time for a p-n junction formation at a designed depth at a given temperature.

View More Related Solutions