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Diode Current Manipulation

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A schottky diode and a pn junction diode have cross sectional areas a=10^-4. The reverse saturation current density of the pn junction diode is 3x10^-8 A/cm^2. The reverse saturation current density of the pn junction diode is 3x10^-12A/cm^2. Determine the forward bias voltage in each diode required to yeild diode currents of 1mA.

If I use Jst=A*T^2*exp( (-q*phi|bn) / KT) to find the voltage for the Schottky diode, how do I find phi|bn from the given information?

IF I use J=q*Dn*npo/Ln+q*Dp*pno/Lp. How do I determine Ln, Lp, npo, pno, Dn, and Dp from the given information?

Thank you.

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Solution Preview

"The reverse saturation current density of the pn jhunction diode is 3x10^-8 A/cm^2. The reverse saturation current density of the pn junction diode is 3x10^-12A/cm^2. "

This is a bit ambiguous. That's okay.

Here is a simple and straightforward solution to the problem.

I am not sure why you need all these complicated equations, I will give you a simple solution and I am sure it's right.

Although the current mechanisms in ...

Solution Summary

A schottky diode and a pn junction diode have cross sectional areas a=10^-4. The reverse saturation current density of the pn junction diode is 3x10^-8 A/cm^2. The reverse saturation current density of the pn junction diode is 3x10^-12A/cm^2. Determine the forward bias voltage in each diode required to yeild diode currents of 1mA.

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Silicon High-Speed Diode Characteristics

The measured I-V characteristics of a silicon high-speed diode (BAS16) are given in TABLE 1, below.

(i) Plot a graph of the diode's forward characteristic.
(ii) Compare the values of the diode's dynamic resistance and reverse current as obtained from TABLE 1 with those predicted by the diode equation. Attempt to account for any discrepancies.

Table1:

V_f: 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Volts
I_f: 1.1 3.0 8.2 23 72 127 196 mA
V_R: 75 Volts
I_R: 1 uA

PS: When I asked my instructor if the details given are enough to find out the reverse current I_s for BAS16 as no dopant level or cross sectional area and etc are given. he said ''The value of IS can be obtained [at least estimated] from the diode equation by inserting a pair of values for I and V from TABLE 1 into the equation.''

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