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    Separation of quasi Fermi levels, Efn, Efp, change in conductivity

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    An undoped Si sample is optically excited at 300K such that Gop=10^19 ehp/cm^3s and taun=taup=1 microseconds.

    (a) What is the separation of the quasi Fermi levels (Efn-Efp)?
    (b) Where is Efn and Efp with respect to the intrinsic Fermi level Ei?
    (c) What is the change in conductivity due to excess carriers?

    What are the answers and how did you find them?

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    Solution Summary

    The solution shows all the calculations required in arriving at the answer regarding quasi and intrinsic Fermi levels and conductivity.