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Separation of quasi Fermi levels, Efn, Efp, change in conductivity

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An undoped Si sample is optically excited at 300K such that Gop=10^19 ehp/cm^3s and taun=taup=1 microseconds.

(a) What is the separation of the quasi Fermi levels (Efn-Efp)?
(b) Where is Efn and Efp with respect to the intrinsic Fermi level Ei?
(c) What is the change in conductivity due to excess carriers?

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Solution Summary

The solution shows all the calculations required in arriving at the answer regarding quasi and intrinsic Fermi levels and conductivity.

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