Purchase Solution

Separation of quasi Fermi levels, Efn, Efp, change in conductivity

Not what you're looking for?

Ask Custom Question

An undoped Si sample is optically excited at 300K such that Gop=10^19 ehp/cm^3s and taun=taup=1 microseconds.

(a) What is the separation of the quasi Fermi levels (Efn-Efp)?
(b) Where is Efn and Efp with respect to the intrinsic Fermi level Ei?
(c) What is the change in conductivity due to excess carriers?

What are the answers and how did you find them?

Purchase this Solution
Solution Summary

The solution shows all the calculations required in arriving at the answer regarding quasi and intrinsic Fermi levels and conductivity.

Purchase this Solution
Free BrainMass Quizzes
Intro to the Physics Waves

Some short-answer questions involving the basic vocabulary of string, sound, and water waves.

Basic Physics

This quiz will test your knowledge about basic Physics.

Classical Mechanics

This quiz is designed to test and improve your knowledge on Classical Mechanics.

Variables in Science Experiments

How well do you understand variables? Test your knowledge of independent (manipulated), dependent (responding), and controlled variables with this 10 question quiz.

The Moon

Test your knowledge of moon phases and movement.

View More Free Quizzes
Related BrainMass Solutions

  • Quasi Fermi Level

    If tn0=tp0=10^-6s, calculate the position of the quasi-Fermi levels for electrons and holes with respect to the intrinsic level (assume that ni=1.5x10^10cm^-3). Please see attached for solution.

  • Characteristics of a Good Conductor or Insulator

    Conductivity is the measure of the ability of a material to transfer electric charges from one point to another under the influence of an external electric field.

  • energy band structure of the material

    As you seem to be from highschool, I think the concept of Fermi energy level is not there in your syllabus and hence I limited my answer to the qualitative discussion only.

  • Fermi Energy and Circuits

    Assuming the intrinsic carrier concentration (ni) in silicon to be 1010 cm-3 , calculate the Fermi energy, EF, relative to the intrinsic Fermi energy, EFi for each layer.

  • Fermi Function versus Energy

    ) in the conduction band and n_i is the concentration of intrinsic carriers in the intrinsic semi conductor, E_I is the Fermi level of the intrinsic semiconductor and T absolute temperature, k_B Boltzmann's constant.

  • Bipolar Junction Transistor

    Assuming the intrinsic carrier concentration (ni) in silicon to be 10^10cm, calculate the Fermi Energy, Ef, relative to the intrinsic energy scale clearly to show the relative positions of Ef and Efi for each layer. See the attachment.

  • External funding needed

    a) Use the EFN equation to generate an estimate of the amount of additional, external funding the firm will require in 2003 b) Develop pro-forma income statements and balance sheets for the year 2003.

  • Energy and pressure of Fermi gas at absolute zero

    If we have N electrons and they occupy the N lowest energy levels in some volume V, then all states up to some maximum momentum pf (Fermi momentum) will be filled.

  • External (Additional) Funds Needed

    In this case, debts will not rise proportional to sales, so EFN = (($1,200/$400)*($480-$400)) - (($150/$400)*$480*(1-($90/$150)) EFN = (3*$80) - (.375*$480*(1-.60)) EFN = $240 - $72 EFN = $168 This solution illustrates how to compute the external

View More Related Solutions