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    Quasi Fermi Level

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    Q. An n-type silicon sample with Nd=10^16cm-3 is steadily illuminated such that g'=10^21cm-s^-1. If tn0=tp0=10^-6s, calculate the position of the quasi-Fermi levels for electrons and holes with respect to the intrinsic level (assume that ni=1.5x10^10cm^-3).

    © BrainMass Inc. brainmass.com December 24, 2021, 4:49 pm ad1c9bdddf
    https://brainmass.com/engineering/mechanical-engineering/quasi-fermi-level-9819

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    Please see attached for solution.

    Solution:

    The excess carrier concentration due to steady light illumination is:

    dn = dp = gtn (no trapping) ...

    Solution Summary

    The solution clearly explains how to obtain the quasi Fermi level given the data in the question using relevant theory.

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