The measured I-V characteristics of a silicon high-speed diode (BAS16) are given in TABLE 1, below.
(i) Plot a graph of the diode's forward characteristic.
(ii) Compare the values of the diode's dynamic resistance and reverse current as obtained from TABLE 1 with those predicted by the diode equation. Attempt to account for any discrepancies.
V_f: 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Volts
I_f: 1.1 3.0 8.2 23 72 127 196 mA
V_R: 75 Volts
I_R: 1 uA
PS: When I asked my instructor if the details given are enough to find out the reverse current I_s for BAS16 as no dopant level or cross sectional area and etc are given. he said ''The value of IS can be obtained [at least estimated] from the diode equation by inserting a pair of values for I and V from TABLE 1 into the equation.''© BrainMass Inc. brainmass.com October 10, 2019, 5:56 am ad1c9bdddf
This solution discusses silicon high speed diode characteristics.