See attached .Can yo show me how to find the value of R to obtain the drain current Id=.4mA. Also find the drain voltage VD.The NMOS transistor has a Vt=2V
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A) In comparing the behaviour of an n-channel MOSFET with a p-channel device having identical geometry and threshold voltage, it is found that the n-channel FET has a greater drain current than that of the p-channel FET. State why this should be so and give one other characteristic in which the two devices would differ.
B) In order to increase the packing density, or the number of devices per unit area, that can be achieved on an integrated circuit, the supply voltage has been reduced. Very large scale integrated circuits (VLSI) now work at a 3.3 V supply or below. Give two reasons why it has been necessary to reduce the supply
voltage in order to achieve a higher packing density on the 'chip'.