A schottky diode and a pn junction diode have cross sectional areas a=10^-4. The reverse saturation current density of the pn junction diode is 3x10^-8 A/cm^2. The reverse saturation current density of the pn junction diode is 3x10^-12A/cm^2. Determine the forward bias voltage in each diode required to yeild diode currents o
Depletion region is the layer formed between the p and n junction of a semi conductor diode due to the migration of charge carriers ie: electrons and holes across the junction, The charctereristics, ie the current-voltage relationship of a pn junction is very much depends on the width and properties of the depletion layer. The m
1) Two identical diodes are connected in series with 100 ohms and a 2 V battery such that each diode is forward biased. Let Io = 10fA; n = 1, T = 25 degrees C. Calculatethe loop current if (a) ideal diodes are assumed; (b) VD = 0.6 V for each diode; (c) each diode is represented by a piecewise-linear model that is exact at ID
In the zener diode circuit calculatethe value of the current through the zener diode if the power supply is rated 24 volts at 500 milli amperes. The load voltage is 12 volts and draws a current of 300 milli amperes. Also calculatethe value of the series resistance R.
Please check my work and if incorrect give me the correct answer
A shunt regulator utilizes a zener diode whose voltage is 5.1V at a current of 50 ma and whose incremental resistance is 8 ohms. Thediode is fed from a supply of 12 V nominal voltage through a 220 ohm resistor. What is the output voltage at no load?
a. 4.8 V
In the circuit shown in the attached figure E1=28V, R2=6ohm, R3=3ohm, I2=4A, and I3=6A (direction of I2 and I3 are shown)
1.)What is the magnitude and direction of the current I1
2.)What is the value of the resistor R1.
3.)What is E2.
It can be shown thatthe reverse saturation current in a diode is given by the equation:
Is= BT^(2/3) exp (-Eg/NkT)
where B is a constant that involves the physical properties, doping and geometry of the junction
T is the absolute temperature
Eg is the energy gap of the semiconductor in joules
k is the Bolt