Purchase Solution

Excess carrier concentrations and diffusion current density.

Not what you're looking for?

Ask Custom Question

Consider a bar of p-Si that is homogeneously doped to a value of 3x10^15 at T=300K. The applied electric field is zero. A light source is incident on the end of the semiconductor. The excess-carrier concentration generated at x=0 is deltap(0)=deltan(0)=10^13/cm^3. Neglect surface effects. Mun=1200/cm^2/Vs. Mup=400/cm^2/Vs. Taun=5*10^-7s. Taup=10^-7s.

(a) Calculate the steady state excess electron and hole concentrations as a function of distance into the semiconductor.
(b) Calculate the diffusion current density as a function of x.

Purchase this Solution

Solution Summary

Solution contains word document with two pages worth of calculations.

Purchase this Solution

Free BrainMass Quizzes
Architectural History

This quiz is intended to test the basics of History of Architecture- foundation for all architectural courses.